HGT1S10N120BNS
- 型號描述:
- HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate
- 型號:
- HGT1S10N120BNS
- 品牌:
- ON Semiconductor
- 交期:
- 10-18工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$229.84 |
| 25+ | NT$213.72 |
| 100+ | NT$204.88 |
| 500+ | NT$196.56 |
| 1000+ | NT$186.68 |
起訂量：1倍增量：1
價格:NT$229.84數量:
合計:NT$230
- Series
- -
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- IGBT Type
- NPT
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Current - Collector (Ic) (Max)
- 35A
- Current - Collector Pulsed (Icm)
- 80A
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 10A
- Power - Max
- 298W
- Switching Energy
- 320µJ (on), 800µJ (off)
- Input Type
- Standard
- Gate Charge
- 100nC
- Td (on/off) @ 25°C
- 23ns/165ns
- Test Condition
- 960V, 10A, 10Ohm, 15V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package
- TO-263AB
- Base Part Number
- HGT1S10N120
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