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HGTG30N60A4
影像僅供參考,以產品規格為準

HGTG30N60A4

型號描述:
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:463W; Collector Emitter Vol
型號:
HGTG30N60A4
品牌:
ON Semiconductor
交期:
10-18工作天
原廠包裝量:
1+NT$223.08
25+NT$207.48
100+NT$198.64
500+NT$190.84
1000+NT$181.48
起訂量:1倍增量:1
價格:NT$223.08數量:

合計:NT$223

Series
-
Packaging
Tube
Part Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
75A
Current - Collector Pulsed (Icm)
240A
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 30A
Power - Max
463W
Switching Energy
280µJ (on), 240µJ (off)
Input Type
Standard
Gate Charge
225nC
Td (on/off) @ 25°C
25ns/150ns
Test Condition
390V, 30A, 3Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Base Part Number
HGTG30N60
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