HGTG30N60C3D
- 型號描述:
- The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high
- 型號:
- HGTG30N60C3D
- 品牌:
- ON Semiconductor
- 交期:
- 10-18工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$383.24 |
| 25+ | NT$355.68 |
| 100+ | NT$341.12 |
| 500+ | NT$327.6 |
| 1000+ | NT$311.48 |
起訂量：1倍增量：1
價格:NT$383.24數量:
合計:NT$383
- Series
- -
- Packaging
- Tube
- Part Status
- Not For New Designs
- IGBT Type
- -
- Voltage - Collector Emitter Breakdown (Max)
- 600V
- Current - Collector (Ic) (Max)
- 63A
- Current - Collector Pulsed (Icm)
- 252A
- Vce(on) (Max) @ Vge, Ic
- 1.8V @ 15V, 30A
- Power - Max
- 208W
- Switching Energy
- 1.05mJ (on), 2.5mJ (off)
- Input Type
- Standard
- Gate Charge
- 162nC
- Td (on/off) @ 25°C
- -
- Test Condition
- -
- Reverse Recovery Time (trr)
- 60ns
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Base Part Number
- HGTG30N60
- Supplier Device Package
- TO-247-3
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