HGTG40N60A4
- 型號描述:
- IGBT 600V 75A 625W 通孔式 TO-247-3
The HGTG40N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT
- 型號:
- HGTG40N60A4
- 品牌:
- ON Semiconductor
- 交期:
- 10-18工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$435.24 |
| 25+ | NT$404.04 |
| 100+ | NT$387.92 |
| 500+ | NT$372.32 |
| 1000+ | NT$353.6 |
起訂量：1倍增量：1
價格:NT$435.24數量:
合計:NT$435
- Series
- -
- Packaging
- Tube
- Part Status
- Not For New Designs
- IGBT Type
- -
- Voltage - Collector Emitter Breakdown (Max)
- 600V
- Current - Collector (Ic) (Max)
- 75A
- Current - Collector Pulsed (Icm)
- 300A
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 40A
- Power - Max
- 625W
- Switching Energy
- 400µJ (on), 370µJ (off)
- Input Type
- Standard
- Gate Charge
- 350nC
- Td (on/off) @ 25°C
- 25ns/145ns
- Test Condition
- 390V, 40A, 2.2Ohm, 15V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Supplier Device Package
- TO-247-3
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