HGTP12N60A4D
- 型號描述:
- The HGTP12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGB
- 型號:
- HGTP12N60A4D
- 品牌:
- ON Semiconductor
- 交期:
- 10-18工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$111.8 |
| 25+ | NT$104 |
| 100+ | NT$99.84 |
| 500+ | NT$95.68 |
| 1000+ | NT$91 |
起訂量：1倍增量：1
價格:NT$111.8數量:
合計:NT$112
- Series
- -
- Packaging
- Tube
- Part Status
- Not For New Designs
- IGBT Type
- -
- Voltage - Collector Emitter Breakdown (Max)
- 600V
- Current - Collector (Ic) (Max)
- 54A
- Current - Collector Pulsed (Icm)
- 96A
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 12A
- Power - Max
- 167W
- Switching Energy
- 55µJ (on), 50µJ (off)
- Input Type
- Standard
- Gate Charge
- 78nC
- Td (on/off) @ 25°C
- 17ns/96ns
- Test Condition
- 390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)
- 30ns
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220-3
- Base Part Number
- HGTP12N60
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