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HGTP3N60A4D
影像僅供參考,以產品規格為準

HGTP3N60A4D

型號描述:
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:17A; Voltage, Vce Sat Max:2.7V; Power Di
型號:
HGTP3N60A4D
品牌:
ON Semiconductor
交期:
10-18工作天
原廠包裝量:
1+NT$77.48
25+NT$71.76
100+NT$69.16
500+NT$66.04
1000+NT$62.92
起訂量:1倍增量:1
價格:NT$77.48數量:

合計:NT$77

Series
-
Packaging
Tube
Part Status
Not For New Designs
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
17A
Current - Collector Pulsed (Icm)
40A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 3A
Power - Max
70W
Switching Energy
37µJ (on), 25µJ (off)
Input Type
Standard
Gate Charge
21nC
Td (on/off) @ 25°C
6ns/73ns
Test Condition
390V, 3A, 50Ohm, 15V
Reverse Recovery Time (trr)
29ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
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